NXP MRFX1k80H
€299.90
Tax included
Delivery time 3 - 5 days
NXP MRFX1k80H
Return policy
Returns are only possible in the condition in which the goods were delivered.
NXP MRFX1k80H
The MRFX1K80 RF LDMOS power transistor from NXP Semiconductors combines high RF output power with superior robustness and thermal performance.
The MRFX1K80 transistor is designed for use at 1800 W at 65 V CW (continuous wave) for applications from 1 MHz to 470 MHz and can operate with a voltage standing wave ratio of 65:1 (VSWR) at pulsed power.
Features
- Based on 65V LDMOS technology
- Wide 1MHz to 470MHz frequency range
- Characterized from 30V to 65V for extended power range
- High breakdown voltage for enhanced reliability and higher efficiency architectures
- High drain-source avalanche energy absorption capability
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- Characterized with series equivalent large-signal impedance parameters
- VSWR >65:1 at all phase angles
- 24dB power gain @ 230MHz (typical)
- 74% Efficiency (typical)
- Low thermal resistance
- RoHS compliant
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Manufacturer:
According to EU 2023/988 Product Safety Regulation (GPSR)
DP-AMP Christian Dindas Addresse: Ötzstr.2 85457 Wifling www@dp-amp.de, www.dp-amp.de
NXP Semiconductors N.V. - High Tech Campus 60 5656 AG Eindhoven Niederlande - +31 40 272 9111
According to EU 2023/988 Product Safety Regulation (GPSR)
DP-AMP Christian Dindas Addresse: Ötzstr.2 85457 Wifling www@dp-amp.de, www.dp-amp.de
NXP Semiconductors N.V. - High Tech Campus 60 5656 AG Eindhoven Niederlande - +31 40 272 9111
.
Responsible person:
DP-AMP Christian Dindas - Ötzstr.2 85457 Wifling - www@dp-amp.de
DP-AMP Christian Dindas - Ötzstr.2 85457 Wifling - www@dp-amp.de
2561-028
95 Items
Data sheet
- RoHS compliant Directive 2011/65/EU
- Yes
NXP MRFX1k80H